A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Conference paper
Publications
64 results for Ernest Y. Wu
Post-breakdown statistics and acceleration characteristics in high-K dielectric stacks
- Ernest Wu
- Jordi Sune
- et al.
- 2011
- IRPS 2011
Conference paperHigh performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Conference paperTowards a viable TDDB reliability assessment methodology: From breakdown physics to circuit failure
- Ernest Y. Wu
- Jordi Suné
- 2009
- IPFA 2009
Conference paperCritical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
Conference paperA high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Conference paperElectrostatic discharge induced oxide breakdown characterization in a 0.1 μm CMOS technology
- A. Salman
- R. Gauthier
- et al.
- 2002
- IRPS 2002
Conference paperThe effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides
- E. Wu
- J.M. McKenna
- et al.
- 2001
- IEEE Electron Device Letters
PaperBreakdown measurements of ultra-thin SiO2 at low voltage
- J.H. Stathis
- A. Vayshenker
- et al.
- 2000
- VLSI Technology 2000
Conference paperUltra-thin oxide reliability for ULSI applications
- Ernest Y. Wu
- James H. Stathis
- et al.
- 2000
- Semiconductor Science and Technology
Paper