Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
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- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
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Publications
64 results for Ernest Y. Wu
Challenges for accurate reliability projections in the ultra-thin oxide regime
- E. Wu
- W.W. Abadeer
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- 1999
- IRPS 1999
Conference paperElectrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
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- 1997
- IEDM 1997
Conference paperModeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
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- 1997
- VLSI Technology 1997
Conference paper