CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Paper
Publications
14 results for Young-Hee Kim
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paperA comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
PaperpFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process
- B. Cartier
- M. Steen
- et al.
- 2009
- VLSI Technology 2009
Conference paperHigh-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Conference paperBand edge high-K /metal gate n-MOSFETs using ultra thin capping layers
- V.K. Paruchuri
- V. Narayanan
- et al.
- 2007
- VLSI-TSA 2007
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paperTunable Workfunction for Fully Silicied Gates (FUSI) and Proposed Mechanisms
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2006
- VLSI-TSA 2006
Conference paperIntegration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Conference paper