An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005
Conference paper
Publications
72 results for Harold J. Hovel
Dislocation-free strained silicon-on-silicon by in-place bonding
- G.M. Cohen
- P.M. Mooney
- et al.
- 2005
- Applied Physics Letters
Paper300 mm SGOI/strain-Si for high-performance CMOS
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- IEEE International SOI Conference 2004
Conference paperPerformance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paperStrained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Conference paperQualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
PaperSwitching and memory characteristics of ZnSe - Ge heterojunctions
- H.J. Hovel
- J.J. Urgell
- 2003
- Journal of Applied Physics
PaperElectrical and optical properties of rf-sputtered GaN and InN
- H.J. Hovel
- J.J. Cuomo
- 2003
- Applied Physics Letters
PaperSwitching and memory in ZnSe single bond sign Ge heterojunctions
- H.J. Hovel
- 2003
- Applied Physics Letters
PaperHigh-efficiency Ga1-xAlxAsSingle Bond signGaAs solar cells
- J. Woodall
- H.J. Hovel
- 2003
- Applied Physics Letters
Paper