The influence of substrate properties on optoelectronic integrated circuits
- H.J. Hovel
- M. Albert
- et al.
- 1990
- Conference on Semi-Insulating III-V Materials 1990
Conference paper
Publications
72 results for Harold J. Hovel
Process damage and contamination effects for shallow Si implanted GaAs
- H. Barratte
- G. Scilla
- et al.
- 1989
- ECS Meeting 1989
Conference paperAn isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
- J. Woodall
- H.J. Hovel
- 1990
- Solar Cells
PaperHigh-efficiency Ga1-xAlxAs-GaAs solar cells
- J. Woodall
- H.J. Hovel
- 1990
- Solar Cells
PaperEnhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
PaperModel for degradation of band gap photo-luminescence in GaAs
- D. Guidotti
- E. Hasan
- et al.
- 1989
- Il Nuovo Cimento D
PaperWNx Diodes on Plasma-Treated GaAs Surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- IEEE T-ED
PaperA GaAs MESFET IC for Optical Multiprocessor Networks
- G.W. Mulvey
- B.K. Ko
- et al.
- 1989
- IEEE T-ED
PaperInterfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
- Yih-Cheng Shih
- A.C. Callegari
- et al.
- 1988
- Journal of Applied Physics
PaperGaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/sec
- C.J. Anderson
- J.H. Magerlein
- et al.
- 1987
- GaAs IC 1987
Conference paper