On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films
- John D. Cressler
- Wei Hwang
- et al.
- 2019
- JES
Paper
Publications
76 results for John D. Cressler
Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
- Rajan Arora
- Zachary E. Fleetwood
- et al.
- 2014
- IEEE TNS
PaperAn investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
- Troy D. England
- Rajan Arora
- et al.
- 2013
- IEEE TNS
PaperTrade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
PaperImpact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
- Rajan Arora
- Sachin Seth
- et al.
- 2011
- IRPS 2011
Conference paperEvaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
- Kurt A. Moen
- Stanley D. Phillips
- et al.
- 2010
- IEEE TNS
PaperHeavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
PaperRadiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
- Anuj Madan
- Jiong Jiong Mo
- et al.
- 2009
- RADECS 2009
Conference paperLow-frequency noise in buried-channel SiGe n-MODFETs
- Anuj Madan
- John D. Cressler
- et al.
- 2009
- Solid-State Electronics
PaperOn the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Paper