Impact of instrumental current scatter on fast Bias Temperature Instability testing
- A. Kerber
- K. Zhao
- et al.
- 2009
- IIRW 2009
Conference paper
Publications
40 results for A. Kerber
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
Conference paperExtremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
- K. Choi
- H. Jagannathan
- et al.
- 2009
- VLSI Technology 2009
Conference paperTDDB failure distribution of metal gate / high-k CMOS devices on SOI substrates
- A. Kerber
- E. Cartier
- et al.
- 2009
- IRPS 2009
Conference paperThe effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability
- Barry P. Linder
- Eduard Cartier
- et al.
- 2009
- IRPS 2009
Conference paperAccurate model for time-dependent dielectric breakdown of high-k metal gate stacks
- T. Nigam
- A. Kerber
- et al.
- 2009
- IRPS 2009
Conference paperStress-induced leakage current and defect generation in nFETs with HfO 2/TiN gate stacks during positive-bias temperature stress
- Eduard Cartier
- Andreas Kerber
- 2009
- IRPS 2009
Conference paperCopper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Conference paperCopper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Conference paperReliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
- Andreas Kerber
- Eduard Albert Cartier
- 2009
- IEEE T-DMR
Paper