22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
51 results for Arvind Kumar
Strained-Si channel super-self-aligned back-gate/double-gate planar transistors
- Hao Lin
- Haitao Liu
- et al.
- 2007
- IEEE Electron Device Letters
PaperPower adaptive control on dense configured super-self-aligned back-gate planar transistors
- Hao Lin
- Haitao Liu
- et al.
- 2006
- LEC 2006
Conference paperA perspective on today's scaling challenges and possible future directions
- Robert H. Dennard
- Jin Cai
- et al.
- 2007
- Solid-State Electronics
PaperSuper-self-aligned back-gatedouble-gate planar transistors: Novel fabrication approach
- Hao Lin
- Haitao Liu
- et al.
- 2006
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperSilicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Conference paperSilicon CMOS devices beyond scaling
- Wilfried Haensch
- Edward J. Nowak
- et al.
- 2006
- IBM J. Res. Dev
PaperThree-dimensional integrated circuits
- Anna W. Topol
- Douglas C. La Tulipe Jr.
- et al.
- 2006
- IBM J. Res. Dev
ReviewSimulation study of a metal / high-κ gate stack for low-power applications
- Arvind Kumar
- Paul M. Solomon
- 2006
- SISPAD 2006
Conference paperSuitability of metal gate stacks for low-power and high-performance applications: Impact of carrier confinement
- Arvind Kumar
- Paul Michael Solomon
- 2006
- IEEE Transactions on Electron Devices
Paper