Measurements of carrier transport in MOSFETs with bottom-up nanowire channel as a function of the nanowire diameter
- G.M. Cohen
- S. Bangsaruntip
- et al.
- 2008
- DRC 2008
Conference paper
Publications
88 results for S.E. Laux
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
- G.M. Cohen
- P. Solomon
- et al.
- 2007
- DRC 2007
Conference paperA simulation study of the switching times of 22- and 17-nm gate-length SOI nFETs on high mobility substrates and Si
- Steven E. Laux
- 2007
- IEEE Transactions on Electron Devices
PaperNanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
PaperOptimum crystallographic alignment for Si n-channel ballistic DGFETs
- S.E. Laux
- 2005
- IEEE Electron Device Letters
PaperSimulation of quantum transport in small semiconductor devices
- M.V. Fischetti
- S.E. Laux
- et al.
- 2005
- SISPAD 2005
Conference paperMonte-Carlo simulations of performance scaling in strained-Si nMOSFETs
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2005
- SISPAD 2005
Conference paperQuantum-based simulation analysis of scaling in ultrathin body device structures
- Arvind Kumar
- Jakub Kedzierski
- et al.
- 2005
- IEEE Transactions on Electron Devices
PaperSimulation study of tunneling devices with quantum confinement in source and drain
- Y. Katayama
- S.E. Laux
- 2004
- DRC 2004
Conference paperSimulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment
- S.E. Laux
- 2004
- IEDM 2004
Conference paper