IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper
Publications
88 results for S.E. Laux
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Conference paperMonte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
Conference paperCarriers induced at the end of a quantum well
- Frank Stern
- Steven E. Laux
- 1992
- Journal of Applied Physics
PaperCharge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1-xGex
- Frank Stern
- Steven E. Laux
- 1992
- Applied Physics Letters
PaperMonte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part II: Submicrometer MOSFET's
- Massimo V. Fischetti
- Steven E. Laux
- 1991
- IEEE T-ED
PaperOvershoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990
Conference paperThe impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Conference paperElectron states in a GaAs quantum dot in a magnetic field
- Arvind Kumar
- Steven E. Laux
- et al.
- 1990
- Physical Review B
PaperGated, asymmetric rings as tunable electron interferometers
- C.J.B. Ford
- A.B. Fowler
- et al.
- 1990
- Surface Science
Paper