Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
Conference paper
Publications
64 results for Philip Trouilloud
Low-current spin transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-TSA 2017
Conference paperLow-current Spin Transfer Torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-DAT 2017
Conference paperDependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters
PaperCritical BEOL aspects of the fabrication of a thermally-assisted MRAM device
- E.J. O'sullivan
- Daniel C. Edelstein
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Conference paperLow-current spin transfer torque MRAM
- D.C. Worledge
- A. Annunziata
- et al.
- 2015
- INTERMAG 2015
Conference paperMaterials investigation for thermally-assisted magnetic random access memory robust against 400°C temperatures
- A. Annunziata
- Philip Trouilloud
- et al.
- 2015
- Journal of Applied Physics
PaperSTT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
Conference paperDevelopment of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
- D.C. Worledge
- G. Hu
- et al.
- 2014
- Journal of Applied Physics
PaperRecent developments in ST-MRAM, including scaling
- Eugene J. O'Sullivan
- Martin J. Gajek
- et al.
- 2013
- ECS Transactions
Conference paper