High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Journal of Applied Physics
Paper
Publications
64 results for Philip Trouilloud
Theory for symmetric toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2007
- Applied Physics Letters
PaperMaterials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
PaperTwo-level BEOL processing for rapid iteration in MRAM development
- Michael C. Gaidis
- Eugene J. O'Sullivan
- et al.
- 2006
- IBM J. Res. Dev
PaperRapid-turnaround characterization methods for MRAM development
- David W. Abraham
- Philip L. Trouilloud
- et al.
- 2006
- IBM J. Res. Dev
ReviewRecent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
Conference paperA 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Conference paperThermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
Conference paperMagnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
- D.C. Worledge
- P.L. Trouilloud
- 2003
- Applied Physics Letters
PaperThermally activated switching of small magnetic tunnel junctions
- R. Leuschner
- V. Korenivski
- et al.
- 2003
- INTERMAG 2003
Conference paper