From 2D-planar to 3D-non-planar device architecture: A scalable path forward?
- Ghavam G. Shahidi
- 2013
- CICC 2013
Conference paper
Publications
106 results for Ghavam Shahidi
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
PaperHigh performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Conference paperStrain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
Conference paperUltrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
PaperA comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
PaperScalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
PaperCeNSE: A central nervous system for the earth
- Ghavam G. Shahidi
- 2011
- TTM 2011
Conference paperImpact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011
Conference paperHigh-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Paper