SOI at IBM: Current status of technology, modeling, design, and the outlook for the 0.1 μm generation
- F. Assaderaghi
- G. Shahidi
- 2000
- IEEE International SOI Conference 2000
Conference paper
Publications
106 results for Ghavam Shahidi
Controlling floating-body effects for 0.13μm and 0.10μm SOI CMOS
- S.K.H. Fung
- N. Zamdmer
- et al.
- 2000
- IEDM 2000
Conference paperSilicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
- S. Voldman
- D. Hui
- et al.
- 2000
- EOS/ESD 2000
Conference paperDesign of a high performance PD SOI for the 0.18 μm technology generation
- M. Sherony
- S.-H. Lo
- et al.
- 2000
- ICM 2000
Conference paperPartially depleted silicon-on-insulator (SOI): A device design/modeling and circuit perspective
- F. Assaderaghi
- G. Shahidi
- et al.
- 2000
- ICM 2000
Conference paperElectrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips
- S. Voldman
- D. Hui
- et al.
- 2000
- Journal of Electrostatics
PaperElectrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips
- S. Voldman
- D. Hui
- et al.
- 1999
- EOS/ESD 1999
Conference paperFrequency dependent behavior of a high performance dynamic register file in 1.8 V, 0.25 μm SOI technology
- R.V. Joshi
- W. Hwang
- et al.
- 1999
- IEEE International SOI Conference 1999
Conference paperElectrostatic discharge protection in silicon-on-insulator technology
- S. Voldman
- D. Hui
- et al.
- 1999
- IEEE International SOI Conference 1999
Conference paperDevice and circuit design issues in SOI technology
- G. Shahidi
- A. Ajmera
- et al.
- 1999
- CICC 1999
Conference paper