Integration of GaAs on Ge/Si towers by MOVPE
- A.G. Taboada
- T. Kreiliger
- et al.
- 2013
- MRS Spring Meeting 2013
Conference paper
Publications
13 results for M. Richter
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
PaperAn integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Conference paperGate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012
Conference paperFabrication of vertical InAs-Si heterojunction tunnel field effect transistors
- H. Schmid
- K. Moselund
- et al.
- 2011
- DRC 2011
Conference paper1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
PaperGaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
PaperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Michael Gordon
- et al.
- 2010
- Journal of Vacuum Science and Technology B
PaperStructural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
PaperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
Conference paper