Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
Conference paper
Publications
16 results for C.F. Chen
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
- H.L. Lung
- Matthew Breitwisch
- et al.
- 2011
- VLSI Technology 2011
Conference paperCharacterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
PaperThe impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Conference paperInfluence of bottom contact material on the selective chemical vapor deposition of crystalline GeSbTe alloys
- Alejandro G. Schrott
- Chieh-Fang Chen
- et al.
- 2010
- MRS Online Proceedings Library
Conference paperUnderstanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Conference paperEndurance improvement of Ge2Sb2Te5-based phase change memory
- Chieh-Fang Chen
- A.G. Schrott
- et al.
- 2009
- IMW 2009
Conference paperThe influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009
Conference paperDynamic resistance - A metric for variability characterization of phase-change memory
- Bipin Rajendran
- Matt Breitwisch
- et al.
- 2009
- IEEE Electron Device Letters
PaperMechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Conference paper