Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- James J. Kelly
- Takeshi Nogami
- et al.
- 2011
- ECS Meeting 2011
Conference paper
Publications
11 results for T. Vo
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
PaperFull metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Conference paperMaterials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
PaperDeposition of copper on ruthenium for Cu metallization
- J. Kelly
- O. Van Der Straten
- et al.
- 2010
- ECS Transactions
Conference paperCopper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Conference paperRobust and low cost copper contact application for low power device at 32 nm-node and beyond
- Atsunobu Isobayashi
- James J. Kelly
- et al.
- 2009
- IITC 2009
Conference paperCopper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
Conference paperElectrical and materials characterization of reactive and co-sputtered tantalum carbide metal electrodes for high-K gate applications
- L.F. Edge
- T. Vo
- et al.
- 2009
- ECS Meeting 2009
Conference paperPEALD Ru liner conformality and Cu trench fill characteristics
- O. Van Der Straten
- J. Wynne
- et al.
- 2008
- ECS Meeting 2008
Conference paper