Publications

16 results for Ryosuke Iijima

Electron mobility limited by remote charge scattering in thin (100)- and (110)-oriented silicon body double-gated metal-oxide-semiconductor field-effect transistors with high-k gate dielectrics
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2012
- Japanese Journal of Applied Physics
Paper
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- - S. Krishnan
  - U. Kwon
  - et al.
- 2011
- IEDM 2011
Conference paper
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Paper
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO₂ gate stack systems
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2011
- Japanese Journal of Applied Physics
Paper
Characteristics of La₂O₃-and Al₂O ₃-capped HfO₂ dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Paper
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- IEEE T-ED
Paper
Materials and electrical characterization of physical vapor deposited La_x Lu_1-x Oinf₃ thin films on 300 mm silicon
- - L.F. Edge
  - T. Vo
  - et al.
- 2011
- Applied Physics Letters
Paper
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2010
- IEDM 2010
Conference paper
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2010
- IEEE T-ED
Paper
pFET V _t control with HfO ₂/TiN/poly-Si gate stack using a lateral oxygenation process
- - B. Cartier
  - M. Steen
  - et al.
- 2009
- VLSI Technology 2009
Conference paper