Atomic layer epitaxy of InAs with high silicon doping concentration
- Doron Cohen Elias
- Guy Cohen
- et al.
- 2020
- JVSTA
Paper
Publications
35 results for Renee Mo
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Conference paperCapacitor-based cross-point array for analog neural network with record symmetry and linearity
- Y. Li
- S. Kim
- et al.
- 2018
- VLSI Technology 2018
Conference paperSilicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics
- Sufi Zafar
- Christopher P. D’Emic
- et al.
- 2018
- ACS Nano
PaperElectron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
Conference paperHigh performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Conference paperHigh performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Conference paperHigh performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Conference paperHigh Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
PaperGe-on-insulator lateral bipolar transistors
- Jeng-Bang Yau
- Joonah Yoon
- et al.
- 2016
- BCTM 2016
Conference paper