High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- Winston Chern
- Pouya Hashemi
- et al.
- 2012
- IEDM 2012
Conference paper
Publications
7 results for Guangrui Xia
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paperRecent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
Conference paperOn implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
Conference paperSi-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
- Guangrui Xia
- Judy L. Hoyt
- et al.
- 2007
- Journal of Applied Physics
PaperInterdiffusion in strained Si/strained SiGe epitaxial heterostructures
- Guangrui Xia
- Michael Canonico
- et al.
- 2006
- Semiconductor Science and Technology
PaperImpact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
Paper