Isolated Preset Architecture for a 32nm SOI embedded DRAM macro
- John Barth
- Don Plass
- et al.
- 2012
- VLSI Circuits 2012
Conference paper
Publications
13 results for John Barth
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond
- Balaji Jayaraman
- Sneha Gupta
- et al.
- 2012
- ICICDT 2012
Conference paperIBM POWER7 processor circuit design
- Dieter Wendel
- John Barth
- et al.
- 2011
- IBM J. Res. Dev
PaperA 45 nm SOI embedded DRAM macro for the POWER™ processor 32 MByte on-chip L3 cache
- John Barth
- Don Plass
- et al.
- 2011
- IEEE Journal of Solid-State Circuits
PaperA 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Conference paperProcess-design considerations for three dimensional memory integration
- S.S. Iyer
- T. Kirihata
- et al.
- 2009
- VLSI Technology 2009
Conference paperA 1 MB cache subsystem prototype with 1.8 ns embedded DRAMs in 45 nm SOI CMOS
- Peter J. Klim
- John Barth
- et al.
- 2009
- IEEE Journal of Solid-State Circuits
PaperAn on-chip dual supply charge pump system for 45nm PD SOI eDRAM
- J.B. Kuang
- A. Mathews
- et al.
- 2008
- ESSCIRC 2008
Conference paperA one MB cache subsystem prototype with 2GHz embedded DRAMs in 45nm SOI CMOS
- Peter Klim
- John Barth
- et al.
- 2008
- VLSI Circuits 2008
Conference paperA 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- John Barth
- William R. Reohr
- et al.
- 2008
- IEEE Journal of Solid-State Circuits
Paper