Chip-level power-performance optimization through thermally-driven across-chip variation (ACV) reduction
- X. Yu
- Oleg Gluschenkov
- et al.
- 2011
- IEDM 2011
Conference paper
Publications
24 results for N. Rovedo
Impact of lateral asymmetric channel doping on 45-nm-technology N-Type SOI MOSFETs
- Hasan M. Nayfeh
- Nivo Rovedo
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperBlanket SMT with in situ N2 plasma treatment on the lang;100〉 wafer for the low-cost low-power technology application
- Jun Yuan
- Victor Chan
- et al.
- 2009
- IEEE Electron Device Letters
PaperA 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Conference paperChannel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- J. Li
- A. Lamberti
- et al.
- 2008
- ECS Meeting 2008
Conference paperHigher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Conference paperEffect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Conference paperHigh performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Conference paperStrained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Conference paperScalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Conference paper