Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics
Paper
Publications
54 results for D.J. Webb
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
Paper1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
PaperGaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
PaperSolid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
- K. Moselund
- H. Ghoneim
- et al.
- 2010
- Nanotechnology
PaperStructural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
PaperH plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics
PaperHigh mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
Conference paperImpact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
Conference paperSuppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- Applied Physics Letters
Paper