A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
- Qiqing Christine Ouyang
- S.J. Koester
- et al.
- 2002
- SISPAD 2002
Conference paper
Publications
36 results for Q. Ouyang
Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels
- Q. Ouyang
- X. Chen
- et al.
- 2002
- ICCDCS 2002
Conference paperFabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects
- Q. Ouyang
- X. Chen
- et al.
- 2001
- VLSI Technology 2001
Conference paperVertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors
- Xiangdong Chen
- Qiqing Ouyang
- et al.
- 2001
- Applied Physics Letters
PaperA novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
- Qiqing Ouyang
- Xiangdong Chen
- et al.
- 2000
- IEEE Transactions on Electron Devices
PaperEnhanced secondary electron injection in novel SiGe flash memory devices
- D.L. Kencke
- X. Wang
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting
Paper