Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
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- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paper
Publications
101 results for G.D. Pettit
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- Y.S. Huang
- H. Qiang
- et al.
- 1991
- Journal of Applied Physics
PaperPhotoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
PaperTemperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- Z. Hang
- D. Yan
- et al.
- 1991
- Physical Review B
PaperCorrelation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
PaperIn situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperIncreased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperObservation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs
- Yichun Yin
- D. Yan
- et al.
- 1991
- Physical Review B
PaperExternally generated piezoelectric effect in semiconductor micro- structures
- H. Qiang
- Fred H. Pollak
- et al.
- 1991
- Physical Review B
PaperDoping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
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- 1991
- IEEE Photonics Technology Letters
Paper