Properties of epitaxial films of YBa2Cu3O7-
- P. Chaudhari
- R.T. Collins
- et al.
- 1987
- Physical Review B
Paper
Publications
60 results for Armin Segmüller
PtSi contact metallurgy formed by three-temperature annealing sequences and short annealing time
- Chin-An Chang
- Armin Segmüller
- 1987
- Journal of Applied Physics
PaperInhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs
- H. Munekata
- Armin Segmüller
- et al.
- 1987
- Applied Physics Letters
PaperCharacterization of epitaxial films by grazing-incidence X-ray diffraction
- Armin Segmüller
- 1987
- Thin Solid Films
PaperThe microstructure of high-critical current superconducting films
- P. Chaudhari
- F.K. LeGoues
- et al.
- 1987
- Science
PaperIon induced adhesion via interfacial compounds
- J.E.E. Baglin
- A.G. Schrott
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B
PaperOriented growth of niobium and molybdenum on GaAs crystals
- M. Eizenberg
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
PaperOriented growth of ultrathin tungsten films on sapphire substrates
- J.H. Souk
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
PaperElectron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum
- M. Eizenberg
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
PaperCharacterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates
- M. Wittmer
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Paper