High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES
Paper
Publications
37 results for Billy L. Crowder
Annealing characteristics of n-type dopants in ion-implanted silicon
- B.L. Crowder
- F.F. Morehead Jr.
- 1969
- UNKNOWN
PaperEPR and luminescence studies of Er+3 in acceptor-doped ZnTe
- Billy L. Crowder
- R.S. Title
- et al.
- 1969
- Physical Review
PaperLuminescence associated with shallow acceptor centers in ZnTe
- B.L. Crowder
- G.D. Pettit
- 1969
- Physical Review
PaperIon Implantation Doping of Si with 70 to 300 keV B. P. and As
- B.L. Crowder
- F. Fairfield
- 1968
- IEEE T-ED
PaperShallow acceptor states in ZnTe and CdTe
- Billy L. Crowder
- William N. Hammer
- 1966
- Physical Review
PaperLight Sensitive, Efficient Electroluminescent ZnTe Switching Diodes
- B.L. Crowder
- F.F. Morehead
- 1966
- IEEE T-ED
Paper