Topology of Silicon Structures with Recessed SiO2
- E. Bassous
- H.N. Yu
- et al.
- 2019
- JES
Paper
Publications
16 results for Hwa N. Yu
Electron trapping at positively charged centers in SiO2
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
PaperThreshold instability in IGFET's due to emission of leakage electrons from silicon substrate into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
PaperEmission probability of hot electrons from silicon into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Journal of Applied Physics
PaperOptically induced injection of hot electrons into SiO2
- T.H. Ning
- H.N. Yu
- 2003
- Journal of Applied Physics
PaperSelf-Aligned Bipolar Transistors for High-Performance and Low-Power-Delay VLSI
- Tak H. Ning
- Randall D. Isaac
- et al.
- 1981
- IEEE T-ED
PaperSubnanosecond Self-Aligned l2L/MTL Circuits
- D.D. Tang
- Tak H. Ning
- et al.
- 1980
- IEEE Journal of Solid-State Circuits
Paper1 µm MOSFET VLSI Technology: Part 1-An Overview
- Hwa-Nien Yu
- Arnold Reisman
- et al.
- 1979
- IEEE T-ED
Paper1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE T-ED
Paper1 µm MOSFET VLSI Technology: Part I-An Overview
- Dale L. Critchlow
- Arnold Reisman
- et al.
- 1979
- IEEE JSSC
Paper