Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Applied Physics Letters
Paper
Publications
38 results for T.W. Hickmott
Sequential single-phonon emission in GaAs-AlxGa1-xAs tunnel junctions
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Physical Review Letters
PaperTemperature Dependence of FET Properties for Cr-Doped and LEC Semi-Insulating GaAs Substrates
- Thomas W. Hickmott
- 1984
- IEEE T-ED
PaperElectrical measurements on n+-GaAs-undoped Ga 0.6Al0.4 As-n-GaAs capacitors
- P. Solomon
- T.W. Hickmott
- et al.
- 1983
- Applied Physics Letters
PaperBarrier heights at the polycrystalline silicon-SiO2 interface
- T.W. Hickmott
- R.D. Isaac
- 1981
- Journal of Applied Physics
PaperComment on 'An experimental study of the thermal dissociation of hydrogen molecules at a heated filament at low pressure
- T.W. Hickmott
- 1979
- Vacuum
PaperEffect of bombardment by glass-forming ions on thermally stimulated ionic conductivity of sodium in SiO2
- T.W. Hickmott
- 1974
- Physical Review Letters
PaperEnergetic electronic processes and negative resistance in amorphous TaTa2O5Au and AlAl2O3Au diodes
- T.W. Hickmott
- 1972
- Thin Solid Films
Paper