Interface traps induced by hole trapping in metal-oxide semiconductor devices
- Y. Roh
- L.P. Trombetta
- et al.
- 1995
- Journal of Non-Crystalline Solids
Paper
Publications
119 results for D.J. DiMaria
Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- A.D. Marwick
- et al.
- 1994
- Journal of Applied Physics
PaperDefect generation in 3.5 nm silicon dioxide films
- D.A. Buchanan
- D.J. DiMaria
- et al.
- 1994
- Applied Physics Letters
PaperDegradation of thin SiO 2 gate oxides by atomic hydrogen
- F. Cartier
- D.J. DiMaria
- et al.
- 1994
- DRC 1994
Conference paperTheory of high-field electron transport and impact ionization in silicon dioxide
- D. Arnold
- E. Cartier
- et al.
- 1994
- Physical Review B
PaperImpact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
- D.J. DiMaria
- E. Cartier
- et al.
- 1993
- Journal of Applied Physics
PaperImpact ionization, degradation, and breakdown in SiO2
- D.J. Dimaria
- E. Cartier
- et al.
- 1992
- MRS Proceedings 1992
Conference paperMeasurements of hydrogen redistribution in hot electron injection of MOS capacitors
- A.D. Marwick
- D.A. Buchanan
- et al.
- 1992
- MRS Proceedings 1992
Conference paperHot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
- E. Cartier
- D.J. DiMaria
- 1993
- Microelectronic Engineering
PaperOptimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications
- Leonello Dori
- Alexandre Acovic
- et al.
- 1993
- IEEE Electron Device Letters
Paper