On the retention time distribution of dual-channel vertical DRAM technologies
- J. Beintner
- Y. Li
- et al.
- 2003
- VLSI-TSA 2003
Conference paper
Publications
24864 results for Exploratory Science
Super-halo asymmetric vertical pass transistor design for ultra-dense DRAM technologies
- D. Chidambarrao
- K. McStay
- et al.
- 2003
- VLSI-TSA 2003
Conference paperNovel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond
- P.S. Parkinson
- K. Settlemyer
- et al.
- 2003
- VLSI-TSA 2003
Conference paperFuture silicon technology trends from a system application perspective
- Tak H. Ning
- 2003
- VLSI-TSA 2003
Conference paperAnalysis and modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2003
- VLSI-TSA 2003
Conference paperEmbedded dynamic random access memory
- Toshiaki Kirihata
- 2003
- VLSI-TSA 2003
Conference paperCompetitive advantage of SOI from dynamic threshold shifts and reduced capacitance
- Mark B. Ketchen
- 2003
- VLSI-TSA 2003
Conference paperRecent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Conference paperImage-based object editing
- Holly Rushmeier
- J. Gomes
- et al.
- 2003
- 3DIM 2003
Conference paperCircuit design issues for the POWER4 chip
- J. Warnock
- 2003
- VLSI-TSA 2003
Conference paper