Potential fluctuations due to Pb centres at the Si/SiO2 interface
- M.J. Uren
- K.M. Brunson
- et al.
- 1997
- Microelectronic Engineering
Paper
Publications
221 results at Microelectronic Engineering
Quantitative model of the thickness dependence of breakdown in ultra-thin oxides
- J.H. Stathis
- 1997
- Microelectronic Engineering
PaperDefect instability in ultra-thin oxides on silicon
- L. Xie
- K.R. Farmer
- et al.
- 1997
- Microelectronic Engineering
PaperElectrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
PaperAn MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate
- S. Rishton
- K. Ismail
- et al.
- 1997
- Microelectronic Engineering
PaperLight emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- E. Cartier
- J.C. Tsang
- et al.
- 1997
- Microelectronic Engineering
PaperA new positive DUV photoresist optimized for 0.25 μm isolated lines
- T. Lindsay
- G.G. Barclay
- et al.
- 1997
- Microelectronic Engineering
PaperMicrocolumn based low energy e-beam writing
- C. Stebler
- M. Despont
- et al.
- 1996
- Microelectronic Engineering
PaperScaling silicon MOS devices to their limits
- S.J. Wind
- D.J. Frank
- et al.
- 1996
- Microelectronic Engineering
PaperElectron beam technology - SEM to microcolumn
- T.H.P. Chang
- M.G.R. Thomson
- et al.
- 1996
- Microelectronic Engineering
Paper