On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering
Paper
Publications
221 results at Microelectronic Engineering
Gate oxide characterization with ballistic electron emission microscopy
- R. Ludeke
- H.J. Wen
- 1997
- Microelectronic Engineering
PaperExplanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. Dimaria
- 1997
- Microelectronic Engineering
PaperA conic primitive-based pattern generator for electron-beam lithography of diffractive optical elements
- H. Rothuizen
- D. Prongué
- et al.
- 1997
- Microelectronic Engineering
PaperLow temperature Al-Cu planarization by PVD Al-Cu-Ge alloys (Invited lecture)
- R.V. Joshi
- 1997
- Microelectronic Engineering
PaperPotential fluctuations due to Pb centres at the Si/SiO2 interface
- M.J. Uren
- K.M. Brunson
- et al.
- 1997
- Microelectronic Engineering
PaperElectrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
PaperScaling silicon MOS devices to their limits
- S.J. Wind
- D.J. Frank
- et al.
- 1996
- Microelectronic Engineering
PaperMicrocolumn based low energy e-beam writing
- C. Stebler
- M. Despont
- et al.
- 1996
- Microelectronic Engineering
PaperThe nanoworld: Chances and challenges
- Heinrich Rohrer
- 1996
- Microelectronic Engineering
Paper