The effect of surface preparation on the production of low interfacial charge regrown interfaces
- T.F. Kuech
- E.D. Marshall
- et al.
- 1986
- Journal of Crystal Growth
Paper
Publications
14462 results for Physical Sciences
Schottky barrier heights of epitaxial Ni-silicides on Si(111)
- M. Liehr
- P.E. Schmid
- et al.
- 1986
- JVSTA
PaperA simplified scanning tunneling microscope for surface science studies
- J.E. Demuth
- R.J. Hamers
- et al.
- 1986
- JVSTA
PaperInterdiffusion and precipitation in Al‒Hf thin-film couples
- M. Wittmer
- F. Legoues
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
PaperThe influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth
PaperContact and metallization problems in GaAs integrated circuits
- N. Braslau
- 1986
- JVSTA
PaperAtomic structure of the epitaxial Al–Si interface
- F. Legoues
- W. Krakow
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
PaperIrradiation of poly(perfluoropropylene oxide) by a 175 KV electron beam: The formation and hydrolysis of acid fluoride groups
- J. Pacansky
- R.J. Waltman
- et al.
- 1986
- Journal of Fluorine Chemistry
PaperHall effect in the heavy fermion systems CeCu6 and UBe13
- T. Penney
- J. Stankiewicz
- et al.
- 1986
- Journal of Magnetism and Magnetic Materials
PaperPropagation of explosive crystallization in thin Rh-Si multilayer films
- J. Floro
- 1986
- JVSTA
Paper