Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Surfactants in Si(111) homoepitaxy
- M. Horn-Von Hoegen
- J. Falta
- et al.
- 1995
- Applied Physics Letters
PaperThe microstructural stability of Al(Cu) lines during electromigration
- T.M. Shaw
- C.-K. Hu
- et al.
- 1995
- Applied Physics Letters
PaperEnhancement of transport critical current densities at 75 K in(Bi,Pb) 2Sr2Ca2Cu3Oy /Ag tapes by means of fission tracks from irradiation by 0.8 GeV protons
- H. Safar
- J.H. Cho
- et al.
- 1995
- Applied Physics Letters
PaperMagnetic imaging of moat-guarded superconducting electronic circuits
- Mark Jeffery
- T. Van Duzer
- et al.
- 1995
- Applied Physics Letters
PaperNear band-edge photoluminescence in relaxed Si1-xGex layers
- L. Tilly
- P.M. Mooney
- et al.
- 1995
- Applied Physics Letters
PaperQuantum well states in Ni/Cu/Ni spin valve structures
- F.J. Himpsel
- O. Rader
- 1995
- Applied Physics Letters
PaperEffect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset
- M.W. Wang
- D.A. Collins
- et al.
- 1995
- Applied Physics Letters
PaperIn situ x-ray diffraction analysis of the C49-C54 titanium silicide phase transformation in narrow lines
- R.A. Roy
- L. Clevenger
- et al.
- 1995
- Applied Physics Letters
PaperInfluence of misfit dislocations on the surface morphology of Si1-xGex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Applied Physics Letters
Paper