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139 results at IEEE Transactions on Electron Devices
A Room Temperature 0.1 µm CMOS on SOI
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- IEEE Transactions on Electron Devices
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- 1994
- IEEE Transactions on Electron Devices
PaperA Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon
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- 1994
- IEEE Transactions on Electron Devices
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
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- IEEE Transactions on Electron Devices
PaperSi/Si1-xGexValence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure
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- 1994
- IEEE Transactions on Electron Devices
PaperOn the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
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- 1993
- IEEE Transactions on Electron Devices
PaperIIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
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- 1993
- IEEE Transactions on Electron Devices
PaperIVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
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- 1993
- IEEE Transactions on Electron Devices
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