Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defects
- 1995
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Finite-element stress analysis of failure mechanisms in a multilevel metallization structure
- L.T. Shi
- K.N. Tu
- 1995
- Journal of Applied Physics
PaperCharacterizing, modeling, and optimizing high-Tc superconducting quantum interference devices
- V. Foglietti
- R.H. Koch
- et al.
- 1995
- Journal of Applied Physics
PaperHydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition
- David E. Kotecki
- Jonathan D. Chapple-Sokol
- 1995
- Journal of Applied Physics
PaperRole of the chamber wall in low-pressure high-density etching plasmas
- James A. O'Neill
- Jyothi Singh
- 1995
- Journal of Applied Physics
PaperRepetition rate effect on the laser ablation of polymer structures
- L. Reyna
- J.R. Soběhart
- 1995
- Journal of Applied Physics
PaperProperties of amorphous diamond films prepared by a filtered cathodic arc
- Richard Lossy
- David L. Pappas
- et al.
- 1995
- Journal of Applied Physics
PaperResonant cavity enhanced photonic devices
- M. Selim Ünlü
- Samuel Strite
- 1995
- Journal of Applied Physics
PaperStoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces
- D.G.J. Sutherland
- H. Akatsu
- et al.
- 1995
- Journal of Applied Physics
PaperUnderstanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
Paper