Realistic tight-binding model for chemisorption: H on Si and Ge (111)K.C. Pandey1976Physical Review BPaper
Semiconductor superfine structures by computer-controlled molecular beam epitaxyL. EsakiL.L. Chang1976Thin Solid FilmsPaper
Many-body effects in the first excited subband of the n-inversion layer of SiB. VinterFrank Stern1976Surface SciencePaper
Some dynamical properties of a two-dimensional Wigner crystalLynn BonsallA.A. Maradudin1976Surface SciencePaper
Oxide-charge-induced impurity band in silicon inversion layersA. HartsteinA.B. Fowler1976Surface SciencePaper
Rotational invariance, finite strain theory, and spin-lattice interactions in paramagnets; Application to the rare-earth vanadatesLynn BonsallR.L. Melcher1976Physical Review BPaper
Screening and level broadening in inversion layers with random fixed chargesFrank Stern1976Surface SciencePaper
Rotational pseudospin-phonon interactions at finite frequenciesPeter A. FeddersR.L. Melcher1976Physical Review BPaper
Electron scattering in silicon inversion layers by oxide and surface roughnessA. HartsteinT.H. Ninget al.1976Surface SciencePaper