IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper
Publications
139 results at IEEE Transactions on Electron Devices
IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- S.L. Wright
- M.B. Rothwell
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperIIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperVIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperNon-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
PaperElectrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperOn the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperInvestigation of the Impact Ionization in the Hydrodynamic Model
- Kamel Souissi
- Farouk Odeh
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperOn the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper