Hybrid Si molecular beam epitaxial regrowth for a strained Si 1-xGex/Si single-quantum-well electroluminescent device
- Y. Kato
- S. Fukatsu
- et al.
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopy
- M. Johnson
- O. Albrektsen
- et al.
- 1993
- Applied Physics Letters
PaperOrigin of Cu-rich precipitate formation on superconducting films: A competition between nucleation, oxidation, and growth kinetics
- Jean-Pierre Locquet
- Yvan Jaccard
- et al.
- 1993
- Applied Physics Letters
PaperMagnetron sputter deposition with high levels of metal ionization
- S.M. Rossnagel
- J. Hopwood
- 1993
- Applied Physics Letters
PaperStress induced pattern formation preceding crystallization of Te 3Se4(I) thin films
- A. Blatter
- C. Ortiz
- 1993
- Applied Physics Letters
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
PaperLifetime measurements on silicon-on-insulator wafers
- J. Freeouf
- N. Braslau
- et al.
- 1993
- Applied Physics Letters
PaperElectromigration failure due to interfacial diffusion in fine Al alloy lines
- C.-K. Hu
- M.B. Small
- et al.
- 1993
- Applied Physics Letters
PaperLaser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes
- A. Jakubowicz
- A. Oosenbrug
- et al.
- 1993
- Applied Physics Letters
PaperChemical vapor deposition of rough-morphology silicon films over a broad temperature range
- S.S. Dana
- M. Anderle
- et al.
- 1993
- Applied Physics Letters
Paper