Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopy
- M. Johnson
- O. Albrektsen
- et al.
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Magnetron sputter deposition with high levels of metal ionization
- S.M. Rossnagel
- J. Hopwood
- 1993
- Applied Physics Letters
PaperImproved process for high-Tc superconducting step-edge junctions
- J.Z. Sun
- W.J. Gallagher
- et al.
- 1993
- Applied Physics Letters
PaperRoom-temperature electron mobility in strained Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
PaperColumnar defects in YBa2Cu3O7-δ induced by irradiation with high energy heavy ions
- R. Wheeler
- M.A. Kirk
- et al.
- 1993
- Applied Physics Letters
PaperHeteroepitaxy of β-FeSi2 on unstrained and strained Si(100) surfaces
- D.R. Peale
- R. Haight
- et al.
- 1993
- Applied Physics Letters
PaperCyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
- J.P. De Souza
- D.K. Sadana
- 1993
- Applied Physics Letters
PaperSystematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
PaperGe segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
Paper