High-Gain Lateral Bipolar Action in a Mosfet Structure
- Sophie Verdonckt-Vandebroek
- S. Simon Wong
- et al.
- 1991
- IEEE T-ED
Paper
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465 results at IEEE T-ED
IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- C.M. Ransom
- T.N. Jackson
- et al.
- 1991
- IEEE T-ED
PaperOn the Scaling Property of Trench Isolation Capacitance for Advanced High-Performance ECL Circuits
- P.F. Lu
- C.T. Chuang
- 1990
- IEEE T-ED
PaperLow-Temperature Avalanche Multiplication In The Collector-Base Junction Of Advanced N-P-N Transistors
- Pong-Fei Lu
- 1990
- IEEE T-ED
PaperOne-Dimensional All Injection Nonquasi-static Models for Arbitrarily Doped Quasi-neutral Layers in Bipolar Junction Transistors Including Plasma-Induced Energy-Gap Narrowing
- Ben S. Wu
- Fredrik A. Lindholm
- 1990
- IEEE T-ED
PaperOn the Very-High-Current Degradations on Si n-p-n Transistors
- Denny Duan-Lee Tang
- Edward Hackbarth
- et al.
- 1990
- IEEE T-ED
PaperAvalanche Electron Injection in 4-nm Si3N4/8-nm SiO2 Dielectric Structure: Turn-Around Phenomenon and Si-SiO2 Interface Degradation
- Leonello Dori
- Maurizio Severi
- et al.
- 1990
- IEEE T-ED
PaperReply To “Comments On 'Unilateral Gain Of Heterojunction Bipolar Transistors At Microwave Frequencies'”
- Sheila Prasad
- Wai Lee
- et al.
- 1990
- IEEE T-ED
PaperCharacterization of a Photoresist with Wavelength Selected Tone
- Lester A. Pederson
- Andrew R. Neureuther
- et al.
- 1990
- IEEE T-ED
PaperFrequency Response of Advanced Silicon Bipolar Transistors at Low Temperature
- Keith A. Jenkins
- 1990
- IEEE T-ED
Paper