High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
PaperFlexural resonant samples for submonolayer measurements of oxygen on Si surfaces
- Russell W. Dreyfus
- 1991
- Applied Physics Letters
PaperEpitaxy of LiF on Ge(100)
- D.A. Lapiano-Smith
- E.A. Eklund
- et al.
- 1991
- Applied Physics Letters
PaperConduction band structure of GexSi1-x using spatially resolved electron energy-loss scattering
- P.E. Batson
- J.F. Morar
- 1991
- Applied Physics Letters
PaperSelective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
PaperResponse to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1991
- Applied Physics Letters
ReviewDirect observation of the silicon nitride on amorphous silicon interface states
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
PaperPhotoemission from thin-film lanthanum hexaboride
- P.G. May
- R. Petkie
- et al.
- 1990
- Applied Physics Letters
PaperAccumulation capacitance for GaAs-SiO2 interfaces with Si interlayers
- J. Freeouf
- D.A. Buchanan
- et al.
- 1990
- Applied Physics Letters
Paper