Stable and shallow PdIn ohmic contacts to n-GaAs
- L.C. Wang
- X.Z. Wang
- et al.
- 1990
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
PaperThreshold reduction through photon recycling in semiconductor lasers
- Yves B. Gigase
- Christoph S. Harder
- et al.
- 1990
- Applied Physics Letters
PaperLocalized electrodeposition induced by Joule heat at a constriction
- C. Julian Chen
- 1990
- Applied Physics Letters
PaperMetal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- J. Freeouf
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
PaperLow surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters
PaperDefect formation caused by a transient decrease in the ambient oxygen concentration during growth of YBa2Cu3O 7-δ films
- A. Gupta
- B.W. Hussey
- et al.
- 1990
- Applied Physics Letters
PaperCritical current density of strained multilayer thin films of Nd 1.83Ce0.17CuOx/YBa2Cu 3O7-δ
- R. Gross
- A. Gupta
- et al.
- 1990
- Applied Physics Letters
PaperElectronic structure and dynamics of thin Ge/GaAs(110) heterostructures
- R. Haight
- J.A. Silberman
- 1990
- Applied Physics Letters
PaperFlux creep in Bi2Sr2CaCu2O8 epitaxial films
- E. Zeldov
- N. Amer
- et al.
- 1990
- Applied Physics Letters
Paper