A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Conference paper
Publications
26898 results for Science
AC characterization and modelling of the GexSi1-x/Si BICFET
- M.E. Mierzwinski
- J.D. Plummer
- et al.
- 1992
- IEDM 1992
Conference paperMixed Schottky/p-n junction behavior in diodes produced by outdiffusion from polycrystalline cobalt disilicide
- D.P. Foty
- H.I. Hanafi
- et al.
- 1992
- IEDM 1992
Conference paperMonte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
- D.J. Frank
- S.E. Laux
- et al.
- 1992
- IEDM 1992
Conference paperMonte carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1992
- IEDM 1992
Conference paperSteady state and pulsed bias stress induced degradation in amorphous silicon thin film transistors for active-matrix liquid crystal displays
- Frank R. Libsch
- 1992
- IEDM 1992
Conference paperGate-current injection and surface impact ionization in MOSFET's with a gate induced virtual drain
- Hon-Sum Wong
- 1992
- IEDM 1992
Conference paperMeasurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Conference paperThe LIC2H2 and NaC2H2 adducts is sodium-vinylidene observed in matrix reaction of sodium with acetylene?
- Minh Tho Nguyen
- Tae-Kyu Ha
- et al.
- 1992
- Molecular Physics
PaperCrystal structure, magnetic susceptibility and thermopower of superconducting and non-superconducting Nd1.85Ce0.15CuO4+y
- I. Magelschots
- N.H. Andersen
- et al.
- 1992
- Physica C: Superconductivity and its applications
Paper