Formation of palladium silicide in the presence of Al with and without a carbon barrier layer
- Chin-An Chang
- 1989
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Electrical characterization of plasma generation in KrF laser Cu ablation
- P.E. Dyer
- 1989
- Applied Physics Letters
PaperReaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)
- Ming L. Yu
- Ulrich Memmert
- et al.
- 1989
- Applied Physics Letters
PaperSchottky diodes on hydrogen plasma treated n-GaAs surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
PaperScanning capacitance microscopy on a 25 nm scale
- C.C. Williams
- W.P. Hough
- et al.
- 1989
- Applied Physics Letters
PaperSelective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
PaperUnpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
- A.C. Callegari
- P.D. Hoh
- et al.
- 1989
- Applied Physics Letters
PaperScanning tunneling microscopy of insulators: CaF2 epitaxy on Si (111)
- Ph. Avouris
- R.A. Wolkow
- 1989
- Applied Physics Letters
PaperLateral forces and topography using scanning tunneling microscopy with optical sensing of the tip position
- Marc A. Taubenblatt
- 1989
- Applied Physics Letters
PaperDopant redistribution during oxidation of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters
Paper