PtSi contact metallurgy formed by three-temperature annealing sequences and short annealing time
- Chin-An Chang
- Armin Segmüller
- 1987
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Thermally stable ohmic contacts to n-type GaAs. II. MoGeInW contact metal
- Masanori Murakami
- W.H. Price
- et al.
- 1987
- Journal of Applied Physics
PaperCrystallization of amorphous silicon during thin-film gold reaction
- L. Hultman
- A. Robertsson
- et al.
- 1987
- Journal of Applied Physics
PaperTheory of high-temperature oxide decomposition at the SiO2/Si interface
- R. Mark Bradley
- 1987
- Journal of Applied Physics
PaperNovel method for determining the anisotropy constant of MnFe in a NiFe/MnFe sandwich
- Daniele Mauri
- Eric Kay
- et al.
- 1987
- Journal of Applied Physics
PaperThe chemistry of and physics with porous sol-gel glasses
- M.W. Shafer
- D.D. Awschalom
- et al.
- 1987
- Journal of Applied Physics
PaperUltraviolet laser ablation of polyimide films
- R. Srinivasan
- Bodil Braren
- et al.
- 1987
- Journal of Applied Physics
PaperWSi0.11 Schottky gates for GaAs metal semiconductor field-effect transistors
- A.C. Callegari
- G.D. Spiers
- et al.
- 1987
- Journal of Applied Physics
PaperElectro-optical effects of uniform layer-tilted state in ferroelectric liquid crystals
- K.H. Yang
- 1987
- Journal of Applied Physics
PaperThe relation between positive charge and breakdown in metal-oxide-silicon structures
- Z.A. Weinberg
- T.N. Nguyen
- 1987
- Journal of Applied Physics
Paper