A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Conference paper
Publications
25372 results for Science
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
- C.T. Chuang
- P.F. Lu
- 1989
- IEDM 1989
Conference paperReduction of crosspoints in one-sided crosspoint switching networks
- Anujan Varma
- Suresh Chalasani
- 1989
- IEEE INFOCOM 1989
Conference paperCharacterization of polyimide precursors using size exclusion chromatography with a light scattering detector
- Seong H. Kim
- P.M. Cotts
- et al.
- 1989
- International SAMPE Electronics Conference 1989
Conference paperAre GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Conference paperSpatially localized electronic structure in polyaniline by scanning tunneling spectroscopy
- Dawn A. Bonnell
- Marie Angelopoulos
- 1989
- Synthetic Metals
PaperElectron-energy-loss studies of dislocations in diamond
- J. Bruley
- P.E. Batson
- 1989
- Physical Review B
PaperEvidence for a large valence-band offset at HgTe-CdTe heterojunctions
- 1989
- Physical Review B
PaperQuadratic temperature dependence of the in-plane resistivity in superconducting Nd1.85CuO4 - Evidence for Fermi-liquid normal state
- C.C. Tsuei
- A. Gupta
- et al.
- 1989
- Physica C: Superconductivity and its applications
PaperScanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface
- C.K. Shih
- Efthimios Kaxiras
- et al.
- 1989
- Physical Review B
Paper