Ar ion laser-assisted chemical etching of molybdenum foils in air
- G. Koren
- 1986
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films
- B.Z. Weiss
- K.N. Tu
- et al.
- 1986
- Journal of Applied Physics
PaperCross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
PaperComment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))
- I.C. Noyan
- Armin Segmüller
- 1986
- Journal of Applied Physics
PaperDisilicide solid solutions, phase diagram, and resistivities. I. TiSi 2-WSi2
- P. Gas
- F.J. Tardy
- et al.
- 1986
- Journal of Applied Physics
PaperA reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
- F.A. Houle
- 1986
- Journal of Applied Physics
PaperDoping dependence of the schottky-barrier height of ti-pt contacts to n-gallium arsenide
- R.F. Broom
- H.P. Meier
- et al.
- 1986
- Journal of Applied Physics
PaperDynamics of UV laser ablation of organic polymer surfaces
- E. Sutcliffe
- R. Srinivasan
- 1986
- Journal of Applied Physics
PaperDoping reaction of PH3 and B2H6 with Si(100)
- Ming L. Yu
- D.J. Vitkavage
- et al.
- 1986
- Journal of Applied Physics
PaperMeasurement of interface states in palladium silicon diodes
- Howard L. Evans
- Xu Wu
- et al.
- 1986
- Journal of Applied Physics
Paper