Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
- H.B. Harrison
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Observations of argon emission lines used for fluorine atom actinometry in low power rf discharges
- S.E. Savas
- 1986
- Applied Physics Letters
PaperCompound materials for reversible, phase-change optical data storage
- M. Chen
- K.A. Rubin
- et al.
- 1986
- Applied Physics Letters
PaperEnhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formation
- T.C. Chou
- C.Y. Wong
- et al.
- 1986
- Applied Physics Letters
PaperEnhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
- F.F. Morehead
- R.F. Lever
- 1986
- Applied Physics Letters
PaperAlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
- L. Vina
- W.I. Wang
- 1986
- Applied Physics Letters
PaperPhotoexcited transport in GaAs/AlAs quantum wells
- R.T. Collins
- K.V. Klitzing
- et al.
- 1986
- Applied Physics Letters
PaperSpatial location of electron trapping defects on silicon by scanning tunneling microscopy
- M.E. Welland
- R.H. Koch
- 1986
- Applied Physics Letters
PaperEffect of surface losses on soliton propagation in Josephson junctions
- A. Davidson
- N.F. Pedersen
- et al.
- 1986
- Applied Physics Letters
PaperDefect formation in thermal SiO2 by high-temperature annealing
- K. Hofmann
- G.W. Rubloff
- et al.
- 1986
- Applied Physics Letters
Paper