Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
PaperOptimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications
- Leonello Dori
- Alexandre Acovic
- et al.
- 1993
- IEEE Electron Device Letters
PaperExtension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- Enrico Zanoni
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Electron Device Letters
PaperHigh-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
PaperAnomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- E. Dubois
- Ghavam G. Shahidi
- et al.
- 1993
- IEEE Electron Device Letters
PaperHigh-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
PaperGate current injection in MOSFET's with a split-gate (virtual drain) structure
- H.-S. Wong
- 1993
- IEEE Electron Device Letters
PaperBiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
PaperEffects of X-Ray Irradiation on GIDL in MOSFET's
- Alexandre Acovic
- Charles Ching-Hsiang Hsu
- et al.
- 1992
- IEEE Electron Device Letters
Paper