IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2
- J. Li
- J. Batey
- et al.
- 1987
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
PaperA Permeable-Base Switching Device Using Stacked Layers of Silicon, Silicon Dioxide, and Silicon-Rich Silicon Dioxide
- D.J. Dimaria
- Maurizio Arienzo
- 1987
- IEEE T-ED
PaperSubmicrometer-Channel CMOS for Low-Temperature Operation
- Jack Yuan-Chen Sun
- Yuan Taur
- et al.
- 1987
- IEEE T-ED
PaperOn the Punchthrough Characteristics of Advanced Self-Aligned Bipolar Transistors
- C.T. Chuang
- Denny Duan-Lee Tang
- 1987
- IEEE T-ED
PaperA study of channel avalanche breakdown in scaled n-mosfet’s
- Steven E. Laux
- Fritz H. Gaensslen
- 1987
- IEEE T-ED
PaperSource-Drain Contact Resistance in CMOS with Self-Aligned TiSi2
- Yuan Taur
- Jack Yuan-Chen Sun
- et al.
- 1987
- IEEE T-ED
PaperTransport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1987
- IEEE T-ED
PaperMethodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar Transistors
- G.P. Li
- E. Hackbarth
- et al.
- 1987
- IEEE T-ED
PaperThe Potential of Complementary Heterostructure FET IC's
- Richard A. Kiehl
- W. Michael Kwapien
- et al.
- 1987
- IEEE T-ED
Paper